Interface induced diffusion

نویسندگان

چکیده

Abstract Interface induced diffusion had been identified in a thin film system damaged by electron bombardment. This new phenomenon was observed Al 2 O 3 (some nm thick)/Si substrate system, which subjected to low energy (5 keV) bombardment producing defects the layer. The produced partially relaxed. rate of relaxation is, however, different vicinity interface and "bulk" parts difference creates an oxygen concentration gradient consequently diffusion, resulting altered layer grows from /Si interface. relative is strongly temperature dependent, various compositions, SiO (at room temperature), + AlO x Si 500 °C), 700 as during irradiation varies. Utilizing this finding it possible produce area selective patterning.

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ژورنال

عنوان ژورنال: Scientific Reports

سال: 2021

ISSN: ['2045-2322']

DOI: https://doi.org/10.1038/s41598-021-88808-1